AVS 61st International Symposium & Exhibition
    2D Materials Focus Topic Monday Sessions
       Session 2D+AS+EM+NS+SS-MoA

Paper 2D+AS+EM+NS+SS-MoA7
Edge States and Exposure to Hydrogen of Silicon at the 2D Limit on Ag(111)

Monday, November 10, 2014, 4:00 pm, Room 310

Session: Dopants, Defects, and Interfaces in 2D Materials 
Presenter: Nathan Guisinger, Argonne National Laboratory
Authors: A.J. Mannix, Argonne National Laboratory
B.T. Kiraly, Argonne National Laboratory
M.C. Hersam, Northwestern University
N.P. Guisinger, Argonne National Laboratory
Correspondent: Click to Email
Chemical functionalization of atomically thin materials results in significant modifications to their electronic properties, which can be exploited in device applications. Compared to the chemical inertness of graphene, 2D silicon is expected to exhibit greater reactivity, and thus a greater amenability to chemical functionalization. Among potential functionalization chemistries, hydrogen termination is favored for its relative simplicity and proven efficacy with graphene and bulk Si surfaces. Using ultra-high vacuum (UHV) scanning tunneling microscopy (STM), we have studied the temperature-dependent effects of exposing 2D silicon platelets grown on Ag(111) to molecular and atomic hydrogen. At low doses, atomic hydrogen results in limited adsorption and temperature dependent etching. In the bulk, the formation of vacancies and extended etch pits is observed. In addition, edge states can play a critical role in the electronic properties of 2D materials. We have also examined at the atomic-scale the edges of 2D silicon platelets.