| AVS 60th International Symposium and Exhibition | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS-MoA1 Invited Paper Etching Challenges in the BEOL for sub 20nm Technology Nodes K. Kumar, Y.P. Feurprier, L. Wang, J. Stillahn, Y. Chiba, A. Ranjan, A. Metz, A. Ko, D.M. Morvay, A. Selino, P. Biolsi, TEL Technology Center, America, LLC |
| 2:40pm | PS-MoA3 Plasma Etch Challenges at 10nm and beyond Technology Nodes using Multi Patterning Techniques in the BEOL to Produce Metallization-Friendly Profiles Y. Mignot, STMicroelectronics, M. Beard, B.G. Morris, B. Peethala, IBM, Y. Loquet, STMicroelectronics, J.H. Chen, IBM, S. Nam, GLOBALFOUNDRIES U.S. Inc., B. Nagabhirava, P. Friddle, Lam Research Corp |
| 3:40pm | PS-MoA6 Fine Patterning of Copper by Plasma Etch Process for Advanced BEOL Interconnects H. Miyazoe, IBM T.J. Watson Research Center, M. Hoinkis, Applied Materials Inc., B.N. To, G. Fritz, A. Pyzyna, M. Brink, C. Cabral, IBM T.J. Watson Research Center, C. Yan, I. Ne’eman, Applied Materials Inc., E.A. Joseph, IBM T.J. Watson Research Center |
| 4:00pm | PS-MoA7 Virtual Fabrication for BEOL Module Optimization Beyond the 22nm Technology Node R. Patz, D. Fried, K. Greiner, M. Stock, D. Faken, J. Lehto, A. Pap, B. van Dyk, M. Kamon, S. Breit, Coventor, Inc. |
| 4:20pm | PS-MoA8 Improvements in Low-k Damage and Hard Mask Selectivity in BEOL Dielectric Etch Using C5HF7 R.L. Bruce, IBM T.J. Watson Research Center, T. Suzuki, M. Nakamura, Zeon Chemicals LP, S.U. Engelmann, E.A. Joseph, N. Fuller, E.M. Sikorski, IBM T.J. Watson Research Center, A. Itou, Zeon Corporation |
| 4:40pm | PS-MoA9 Mitigation of Plasma-induced Damage of Advanced 2.0 Porous Dielectrics by the Pore Stuffing Approach M.H. Heyne, L. Zhang, KU Leuven, Belgium, J.-F. De Marneffe, R. Gronheid, C.J. Wilson, M. Baklanov, IMEC, Belgium |
| 5:00pm | PS-MoA10 EPR Studies of SiOC:H BEOL (Low-k) Dielectrics T.A. Pomorski, P.M. Lenahan, M. Mutch, Penn State University, S.W. King, Intel Corporation |
| 5:20pm | PS-MoA11 Effect of NH3/N2 Ratio in Plasma Treatment on Porous Low Dielectric Constant SiCOH Dielectric Y.L. Cheng, J.F. Huang, T.C. Bo, National Chi-Nan University, Taiwan, Republic of China |