AVS 60th International Symposium and Exhibition
    Electronic Materials and Processing Thursday Sessions

Session EM2-ThA
Non-traditional Inorganic Semiconductors

Thursday, October 31, 2013, 2:00 pm, Room 101 B
Moderators: S. Durbin, University at Buffalo-SUNY, D.O. Scanlon, University College London, UK


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm EM2-ThA1 Invited Paper
Electronic Structure and Defect Chemistry of II-IV-V2 Semiconductors
D.O. Scanlon, University College London, UK
2:40pm EM2-ThA3 Invited Paper
The Role of Native Defects in the Electrical Conductivity of Metal-Oxide Semiconductors
A. Janotti, University of California, Santa Barbara
3:40pm EM2-ThA6 Invited Paper
Electronic and Lattice Dynamical Properties of II-IV-N2 Semiconductors
W.R. Lambrecht, A. Punya, Case Western Reserve University
4:20pm EM2-ThA8 Invited Paper
Novel Nitrides and Bismides: Growth and Optical Properties
T.D. Veal, University of Liverpool, UK
5:00pm EM2-ThA10
Single Crystal Growth of ZnSnN2 by Molecular Beam Epitaxy
N. Feldberg, J.D. Aldous, University at Buffalo, W.M. Linhart, T.D. Veal, University of Liverpool, UK, P.A. Stampe, R.J. Kennedy, Florida A&M University, D.O. Scanlon, University College London, UK, L.F.J. Piper, Binghamton University, L. Schweidenback, A. Petrou, S. Durbin, University at Buffalo
5:20pm EM2-ThA11 Invited Paper
Growth and Characterization of Zn-IV-Nitride Semiconductors
K. Kash, P. Quayle, E. Blanton, Case Western Reserve University