AVS 60th International Symposium and Exhibition
    Electronic Materials and Processing Wednesday Sessions

Session EM-WeA
III-V Devices and Tunnel FETs

Wednesday, October 30, 2013, 2:00 pm, Room 101 B
Moderators: P.C. McIntyre, Stanford University, E.M. Vogel, Georgia Institute of Technology


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:40pm EM-WeA3 Invited Paper
Plasma Enhanced ALD of High-k Dielectrics on GaN and AlGaN: Interface Formation, Growth, and Electronic States
R.J. Nemanich, B.S. Eller, J. Yang, Arizona State University
4:00pm EM-WeA7 Invited Paper
Graphene-based Vertical Heterostructures and Tunneling Field Effect Transistors
K. Lee, K. Kim, B. Fallahazad, S. Larentis, M.S. Points, E. Tutuc, The University of Texas at Austin
4:40pm EM-WeA9
Quantum Mechanical Corrections for Accurate and Rapid Analysis of III-V/High-k MOS Devices
R. Galatage, C.L. Hinkle, University of Texas at Dallas, E.M. Vogel, Georgia Institute of Technology
5:00pm EM-WeA10 Invited Paper
The Physics and Challenges of Realizing High Performance Group IV Tunnel Transistors
J.C.S. Woo, H.-Y. Chang, B. Adams, P.-Y. Chien, J. Li, University of California at Los Angeles