AVS 60th International Symposium and Exhibition | |
Electronic Materials and Processing | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:40pm | EM-WeA3 Invited Paper Plasma Enhanced ALD of High-k Dielectrics on GaN and AlGaN: Interface Formation, Growth, and Electronic States R.J. Nemanich, B.S. Eller, J. Yang, Arizona State University |
4:00pm | EM-WeA7 Invited Paper Graphene-based Vertical Heterostructures and Tunneling Field Effect Transistors K. Lee, K. Kim, B. Fallahazad, S. Larentis, M.S. Points, E. Tutuc, The University of Texas at Austin |
4:40pm | EM-WeA9 Quantum Mechanical Corrections for Accurate and Rapid Analysis of III-V/High-k MOS Devices R. Galatage, C.L. Hinkle, University of Texas at Dallas, E.M. Vogel, Georgia Institute of Technology |
5:00pm | EM-WeA10 Invited Paper The Physics and Challenges of Realizing High Performance Group IV Tunnel Transistors J.C.S. Woo, H.-Y. Chang, B. Adams, P.-Y. Chien, J. Li, University of California at Los Angeles |