AVS 60th International Symposium and Exhibition | |
Electronic Materials and Processing | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:20am | EM+TF-MoM1 Ultrathin Titanyl Phthalocyanine Active Layer on Graphene for Atomic Layer Deposition A.C. Kummel, H.H. Park, University of California, San Diego, S.W. Park, University of California at San Diego |
8:40am | EM+TF-MoM2 Correlation between Current-Voltage Measurements and the Barrier Height Determined by XPS in Ge p-MOS Capacitors S. Fadida, F. Palumbo, Technion Israel Institute of Technology, Israel, L. Nyns, H.C. Lin, S. Van Elshocht, M. Caymax, IMEC, Belgium, M. Eizenberg, Technion Israel Institute of Technology, Israel |
9:00am | EM+TF-MoM3 Invited Paper Gate Dielectrics on Graphene J. Kim, The University of Texas at Dallas |
9:40am | EM+TF-MoM5 Impact of N2 and Forming Gas Plasma Exposure on the Growth and Interfacial Characteristics of Al2O3 on Al0.25Ga0.75N X. Qin, B. Brennan, H. Dong, A. Azcatl, R.M. Wallace, University of Texas at Dallas |
10:00am | EM+TF-MoM6 Monitoring the HfO2-InAs Interface during the ALD Process using Ambient Pressure X-ray Photoemission Spectroscopy R. Timm, S. Yngman, A. Head, J. Knutsson, M. Hjort, J. Knudsen, J. Schnadt, L.-E. Wernersson, A. Mikkelsen, Lund University, Sweden |
10:40am | EM+TF-MoM8 Invited Paper Challenges and Progress in Complementary Tunnel FETs M. Wistey, G. Zhou, Y. Lu, R. Li, Q. Zhang, W.S. Hwang, Q. Liu, T. Vasen, C. Chen, M. Qi, H. Zhu, J.-M. Kuo, S. Chae, Y. Lu, H. Zhu, J.-M. Kuo, T. Kosel, S. Koswatta, P.J. Fay, A. Seabaugh, H. Xing, University of Notre Dame |
11:20am | EM+TF-MoM10 In Situ Infrared Study on the Interfacial Layer Formation during the Atomic Layer Deposition of Aluminum Silicate on Chemically-treated InP(100) W. Cabrera, K. Bernal-Ramos, A. Vega, The University of Texas at Dallas, I.M. Povey, Tyndall National Institute, Ireland, H. Dong, B. Brennan, R.M. Wallace, Y.J. Chabal, The University of Texas at Dallas |
11:40am | EM+TF-MoM11 Density Function Theory Simulations of a-Al2O3/GaN(0001) Interfaces Resulting from Ex Situ and In Situ Surface Preparation A.C. Kummel, E. Chagarov, S. Gu, P. Asbeck, University of California San Diego, S. Madisetti, S. Oktyabrsky, University at Albany-SUNY, T. Kaufman-Osborn, A.J. Kerr, University of California San Diego |