| AVS 60th International Symposium and Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | C.-T. Lee, ITRC, NARL, Taiwan, Republic of China |
| Authors: | C.-T. Lee, ITRC, NARL, Taiwan, Republic of China Y.-C. Yeh, ITRC, NARL, Taiwan, Republic of China W.-H. Cho, ITRC, NARL, Taiwan, Republic of China H.-P. Chen, ITRC, NARL, Taiwan, Republic of China P.-K. Chiu, ITRC, NARL, Taiwan, Republic of China C.-N. Hsiao, ITRC, NARL, Taiwan, Republic of China S.W. Lin, National Synchrotron Radiation Research Center P.-J. Wu, National Synchrotron Radiation Research Center |
| Correspondent: | Click to Email |
Most applications of Mo/Si bilayers mirrors in extreme-ultraviolet lithography (EUVL) require a high normal-incidence reflectivity. This work represents our effort to design and prepare the Mo/Si multilayer film with 4 nm bandwidth at 13.5 nm wavelength. The Mo/Si multilayer film was deposited on a Si substrate at room temperature by RF magnetron sputtering with Ar gas. The optimum simulation reveals that normal-incidence average reflectivity of Mo/Si multilayer film with 4 nm bandwidth at 13.5 nm was 14%. Effects of RF power and working pressure on the microstructure, surface morphology and EUV reflectivity of Mo/Si multilayer film were investigated by X-ray diffraction, atomic force microscopy and high resolution transmission electron microscopy (HRTEM). It was found that the surface roughness of Mo/Si multilayer film was significantly improved under 0.2 nm at low RF power and work pressure. In addition, HRTEM lattice fringe revealed that Mo film was polycrystalline and Si film was amorphous. The resulting EUV bandwidth of this Mo/Si multilayer film is 4 nm (λ=13.5 nm, α=15o ).