| AVS 60th International Symposium and Exhibition | |
| Thin Film | Wednesday Sessions |
| Session TF+VT-WeM |
| Session: | Thin Film Permeation Barriers and Encapsulation |
| Presenter: | S.A. Starostin, FUJIFILM Manufacturing Europe B.V, Netherlands |
| Authors: | S.A. Starostin, FUJIFILM Manufacturing Europe B.V, Netherlands H. de Vries, FUJIFILM Manufacturing Europe B.V, Netherlands M. Creatore, Eindhoven University of Technology, Netherlands M.C.M. van de Sanden, Dutch Institute for Fundamental Energy Research (DIFFER), Netherlands |
| Correspondent: | Click to Email |
Atmospheric pressure plasma enhanced thin film deposition is new and rapidly developing technology strongly beneficial regarding equipment costs, footprint size and possibilities of in-line processing. However the main characteristics of the deposition process as well as the properties of synthesized coatings are not known as good as for the traditional low pressure PECVD. Moreover the control over large area plasma at atmospheric pressure imposes serious scientific and engineering challenges. Recently we demonstrated the possibility to produce high quality silica layers using ambient air as a process gas [1] and to synthesize films with ultra-smooth morphology [2].
In this contribution we present study on the thin film properties deposited in high current diffuse dielectric barrier discharge between cylindrical electrode system in industrially relevant roll- to -roll configuration on polymeric PEN and PET webs. As the model case the silica-like films were synthesized from cost efficient gas mixture of N2/O2 and TEOS as organosilicon precursor. Film composition and molecular network structure was analyzed by ATR-FTIR and XPS methods. Gas permeation properties were controlled by MOCON and Ca-test.
The energy spent per precursor molecule as well as the substrate temperature were recognized as important parameters influencing thin films composition and gas permeation characteristic. The increased incorporation of nitrogen was detected for good performing gas diffusion barrier layers. An unusual power law dependency of WVTR on the film thickness was found for the 20 nm – 120 nm thick films. It was shown that atmospherically deposited silica like thin films can provide excellent overall WVTR barrier of 7.5 10-4 g/m2 day at 40 oC and 90% RH which can be extrapolated using experimental activation energy value down to 6 10-5 g/m2 day at standard conditions of 20 oC /50% RH. The measured intrinsic barrier value at 20 oC /50% RH was as good as 3 10-5 g/m2 .
[1] S.A. Starostin, P. Antony Premkumar, H. de Vries, R.M.J. Paffen, M.Creatore, and M.C.M. van de Sanden; Appl. Phys. Lett. 96, 061502 (2010)
[2] P. Antony Premkumar, S.A. Starostin, H. de Vries, M. Creatore, P.M. Koenraad, M.C.M. van de Sanden; Plasma Processes and Polymers 10, 313 (2013)