| AVS 60th International Symposium and Exhibition | |
| Thin Film | Wednesday Sessions |
| Session TF+AS+NS+SE-WeA |
| Session: | Beam and Glancing Angle Deposition (GLAD) Techniques |
| Presenter: | H.M. Wu, Carl Zeiss |
| Authors: | H.M. Wu, Carl Zeiss D. Ferranti, Carl Zeiss L.A. Stern, Carl Zeiss D.Y. Xia, Carl Zeiss |
| Correspondent: | Click to Email |
Focused ion beam systems combined with gas precursors for deposition and enhanced, selective material removal have led to many important applications. The gas field ion source (GFIS) has demonstrated its capabilities as an ultrahigh resolution (< 0.5 nm) imaging as well as a sub-10 nm nanofabrication technique using helium ion beam. Recently, the new Zeiss Orion-NanoFab microscope provides three ion beams (helium, neon and gallium) into one platform and promotes the further studies of He and Ne induced deposition and etching procedures to compare with a Ga ion beam. Because of the mass difference between He, Ne and Ga ions, the interactions of ions with precursor molecules result in different sputtering rates, implantation and deposition yields. This presentation gives an overview of our current studies using this new platform to deposit or mill nano structures with sub-10 nm resolution.
He and Ne ion beam induced metal and dielectric deposition using different precursors have been investigated extensively in our lab. The dimensions and electrical properties of these deposits are strongly dependent on the ion beam type, beam conditions and precursor gas flux. To improve the properties of deposits and minimize the ion implantation, we have been optimizing deposition conditions to increase the deposition purity and to maximize the deposition yield. We will discuss the factors that determine the ultimate resolution of deposits using He and Ne ion beams and the beam chemistry that influences the choice of gas precursors for a particular procedure and how to select between the He and the Ne ion beams to achieve the best result.
Removing material by direct He ion sputter (milling) has a resolution of a few nanometers, but a low sputter yield. The Ne ion beam offers precise nanofabrication capabilities, and 30 times higher sputter yields than the He ion beam. The implementation of chemical etching further increases the material removal process substantially and reduces the ion implantation. The effects of the ion beam conditions and etchant gas flux on the milling rate and on the gas assisted etching (GAE) enhancement have been studied and 10x enhancement has been achieved so far, compared with direct ion beam sputter.