| AVS 60th International Symposium and Exhibition | |
| Plasma Science and Technology | Wednesday Sessions |
| Session PS-WeM |
| Session: | Fundamentals of Plasma Surface Interactions |
| Presenter: | K. Ishikawa, Nagoya University, Japan |
| Authors: | T. Takeuchi, Nagoya University, Japan Y. Zhang, Nagoya University, Japan K. Ishikawa, Nagoya University, Japan M. Sekine, Nagoya University, Japan Y. Setsuhara, Osaka University, Japan K. Takeda, Nagoya University, Japan H. Kondo, Nagoya University, Japan M. Hori, Nagoya University, Japan |
| Correspondent: | Click to Email |
We report an observed relationship between chemical modifications and physical morphological roughness on a photoresist for ArF excimer laser photolithography in plasma beam irradiation. In fluorocarbon plasma, at the very beginning period, three stages of characteristics of chemical changes occurred upon surface roughening or wrinkling of the photoresist; (1) a rapid reduction of C=O bonds, (2) gradual formation of a fluorocarbon layer, and graphitic (sp2-C) or amorphous (sp3-C) carbon layer; (3) as elapsed incubation phase, i.e. lag, where reached a steady-state of chemical changes for fluorocarbon ion irradiation on the surface; finally morphological changes initiated. Those processes evolved within dose of 6 ×1015 cm–2 for ion energy of a few hundred eV [1].
Furthermore, in hydrogen plasma, especially in annealing at approximately 160°C, the photoresist surface was corrugated with size of the order of microns as similar as the report about mechanically buckling [2]. Subsequently the roughen surface was treated by the plasma beam irradiation, the roughness was developed with a size of the order of nanometers as same as the previous report [1]. Therefore we are revisiting the roughening process on the plasma process [3], and we will discuss on the roughening phenomena on the photoresist during plasma processes.
References [1] T. Takeuchi et al., J. Phys. D 46, 102001 (2013). [2] H. Jiang et al., PNAS 104, 15607 (2007). [3] R. Bruce et al. J. Appl. Phys. 107, 084310 (2010).