AVS 60th International Symposium and Exhibition
    Helium Ion Microscopy Focus Topic Thursday Sessions
       Session HI-ThA

Paper HI-ThA11
Towards SIMS on the Helium Ion Microscope: Detection Limits and Experimental Results on the ORION

Thursday, October 31, 2013, 5:20 pm, Room 203 A

Session: Imaging and Lithography with Helium Ions
Presenter: D. Dowsett, Centre de Recherche Public – Gabriel Lippmann, Luxembourg
Authors: T. Wirtz, Centre de Recherche Public – Gabriel Lippmann, Luxembourg
D. Dowsett, Centre de Recherche Public – Gabriel Lippmann, Luxembourg
S. Sijbrandij, Carl Zeiss Microscopy
J.A. Notte, Carl Zeiss Microscopy
Correspondent: Click to Email

The ORION Helium Ion Microscope (HIM) has become a well-established tool for high resolution microscopy [1] and nanofabrication [2]. The source can operate with both helium and neon [3]. While secondary electrons are used for high-resolution high-contrast imaging, some compositional information can be obtained from backscattered He/Ne ions.

In order to get chemical information with much higher sensitivity, we have investigated the feasibility of performing Secondary Ion Mass Spectrometry on the HIM [4]. In order to reach these objectives, the secondary ion formation process under He+ and Ne+ bombardment has been investigated and optimized along with the experimental beam parameters such as spot size and dwell time [5]. We have determined experimentally secondary ion yields under helium and neon bombardment for a range of semiconductor and metal samples. While basic yields are low due to the use of noble gas primary ions, they may be enhanced by several orders of magnitude for both negative and positive secondary ions by caesium and oxygen flooding respectively [6]. Measurement of yields has allowed us to determine detection limits for these samples under typical ORION imaging conditions.

More recently an extraction and detection system for secondary ions has been developed for the Helium Ion Microscope by the CRP - Gabriel Lippmann. We have investigated secondary ion emission for semiconductor (Si, InP and GaAs) and metal (Cu, Ni) samples on the ORION. Both total secondary ion depth profiles and secondary ion images have been obtained under helium and neon bombardment.

The obtained results are very encouraging and the prospects of performing SIMS on the ORION are very interesting. In this paper we will present an overview of our results to date and first experimental results of secondary ion detection on the Helium Ion Microscope.

References

[1] L. Scipioni, C.A. Sanford, J. Notte, B. Thompson, and S. McVey, J. Vac. Sci. Technol. B 27, 3250 (2009)

[2] D. Winston et al, Nano Letters 11 4343 (2011)

[3] F. Rahman et al., Scanning 33 (2011) 1

[4] T. Wirtz, N. Vanhove, L. Pillatsch, D. Dowsett, S. Sijdrandij and J. Notte, Appl. Phys. Lett. 101 041601 (2012)

[5] D. Dowsett, T.Wirtz, N. Vanhove, L. Pillatsc, S. Sijdrandij and J. Notte, J. Vac. Sci. Technol. B 30 06F602 (2012)

[6] P. Philipp et al., Int. J. Mass Spectrom. 253 (2006) 71