Invited Paper GR+EM+NS+SS+TF-ThA6
Controlled Scalable Synthesis of Uniform High-quality Monolayer and Fewlayer MoS₂ Films

Thursday, October 31, 2013, 3:40 pm, Room 101 A

Two dimensional (2D) materials with a monolayer of atoms represent an ultimate control of material dimension in the vertical direction. Molybdenum sulfide (MoS₂) monolayers, with a direct bandgap of 1.8 eV, offer an unprecedented prospect of miniaturizing semiconductor science and technology down to a truly atomic scale. Recent studies have indeed demonstrated the promise of 2D MoS₂ in fields including field effect transistors, low power switches, optoelectronics, and spintronics. However, device development with 2D MoS₂has been delayed by the lack of capabilities to produce large-area, uniform, and high-quality MoS₂ monolayers. Here we present a self-limiting approach that can grow high quality monolayer and few-layer MoS₂ films over an area of centimeters with unprecedented uniformity and controllability. This approach is compatible with the standard fabrication process in semiconductor industry. It can pave the way for the development of practical devices with 2D MoS₂ and opens up new avenues for fundamental research.