| AVS 60th International Symposium and Exhibition | |
| Graphene and Other 2D Materials Focus Topic | Thursday Sessions |
| Session GR+EM+NS+SS+TF-ThA |
| Session: | Beyond Graphene: Other 2D Electronic Materials and their Heterostructures |
| Presenter: | H.-C. Shin, Sungkyunkwan University, Republic of Korea |
| Authors: | H.-C. Shin, Sungkyunkwan University, Republic of Korea S.J. Ahn, Sungkyunkwan University, Republic of Korea B.G. Shin, Sungkyunkwan University, Republic of Korea J.-R. Ahn, Sungkyunkwan University, Republic of Korea |
| Correspondent: | Click to Email |
Since the hexagonal boron nitride (h-BN) and graphene lateral hybrid structures (BNCs) were successfully fabricated on Cu foil, methods of BNCs synthesis were studied due to theoretically expected interesting electronic, magnetic and transport properties of BNCs, especially on metallic surfaces. However, for device application, it is required to transfer from metallic surfaces to insulating surface. We demonstrate direct growth of large scale epitaxial BNCs controlled a ratio of h-BN and graphene from perfect h-BN to perfect graphene by annealing temperature on 6H-SiC (0001) wafer. the electronic structures and the growth mechanism of BNCs on SiC were investigated by using low energy electron diffraction (LEED), angle resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). We found that grown graphene domains gradually replaced initially grown h-BN domains and increased by h-BN decomposition and silicon sublimation at above 1150 degree Celsius. Interestingly, although graphene conventionally grown on 6H-SiC (0001) rotate 30 degrees from substrate, BNCs included both initially grown h-BN and finally grown graphene have 0 degree rotation angle from SiC. Therefore, h-BN and graphene are connected at an atomic scale.