| AVS 60th International Symposium and Exhibition | |
| Graphene and Other 2D Materials Focus Topic | Monday Sessions |
| Session GR+EM+NS+SP+TF-MoA |
| Session: | Electronic Properties and Charge Transport in 2D Materials |
| Presenter: | Y.J. Lee, University of California, Riverside |
| Authors: | Y.J. Lee, University of California, Riverside J. Velasco Jr, University of California, Riverside D. Tran, University of California, Riverside F. Zhang, University of Pennsylvania W. Bao, University of California, Riverside L. Jing, University of California, Riverside K. Myhro, University of California, Riverside D. Smirnov, National High Magnetic Field Laboratory C.N. Lau, University of California, Riverside |
| Correspondent: | Click to Email |
We perform low temperature transport measurements on dual-gated suspended Bernal-stacked(ABA) and Rhombohedral-stacked(ABC) trilayer graphene in the quantum Hall (QH) regime. In ABA Bernal stacking order trilayer, we observe QH plateaus at filling factors ν=-8, -2, 2, 6, and 10, in agreement with the full-parameter tight binding calculations. In high magnetic fields, odd integer plateaus are also resolved, indicating almost complete lifting of the 12-fold degeneracy of the lowest Landau levels (LL). Under an out-of-plane electric field E⊥, we observe degeneracy breaking and transitions between QH plateaus. Interestingly, depending on its direction, E⊥ selectively breaks the LL degeneracies in the electron-doped or hole-doped regimes. In ABC Rhombohedral stacking order trilayer, we observe QH plateaus at filling factors ν=0, 1, 2 and 3 in a high magnetic field.