| AVS 60th International Symposium and Exhibition | |
| Graphene and Other 2D Materials Focus Topic | Tuesday Sessions |
| Session GR+AS+EM+MI+MN-TuM |
| Session: | Optical, Magnetic, Mechanical and Thermal Properties of 2D Materials |
| Presenter: | C.-Y. Park, Sungkyunkwan University, Republic of Korea |
| Authors: | C.-Y. Park, Sungkyunkwan University, Republic of Korea Y. Kim, Sungkyunkwan University, Republic of Korea |
| Correspondent: | Click to Email |
Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial.
Here, we present the effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.