| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM+PS-TuM |
| Session: | High-k Oxides for MOSFETs and Memory Devices I |
| Presenter: | S. Clima, IMEC, Belgium |
| Authors: | S. Clima, IMEC, Belgium R. Degraeve, IMEC, Belgium K. Sankaran, IMEC, Belgium Y.Y. Chen, IMEC, Belgium A. Fantini, IMEC, Belgium A. Belmonte, IMEC, Belgium L. Zhang, IMEC, Belgium N. Raghavan, IMEC, Belgium L. Goux, IMEC, Belgium B. Govoreanu, IMEC, Belgium D.J. Wouters, IMEC, Belgium M. Jurczak, IMEC, Belgium G. Pourtois, IMEC, Belgium |
| Correspondent: | Click to Email |
The Resistive Random Access Memory with its great potential for scalability to the nanoscale dimensions, high speed, low energy switching and CMOS compatibility, is emerging as a promising candidate for non-volatile memories.1-4 Having a good understanding of the mechanisms at the origin of the switching at the atomic level is important for designing high performance resistive memory stack. For instance, the thermodynamic driving forces that help shaping a suitable oxygen profile for low forming voltages might prove to be disadvantageous for a good endurance. Another trade-off that needs further considerations is the compromise between the retention and the switching dynamics, determined by the kinetic energy barriers of the conducting defect. With the help of classical DFT and bond-boosted Accelerated Ab Initio Molecular Dynamics (AIMD) technique,5 we evaluated the thermodynamics of the defects formation and the diffusion kinetics of the conducting species in RRAM materials.6, 7 The experimental and first-principles outputs were used to develop a stochastic model simulator, which we use to interpret the experimental set/reset dynamics, endurance and retention measurements.8 Modeling and simulations play an important role in understanding the atomistic mechanisms that take place during the manufacture, operation or storage of the resistive memory element. Through this talk we present our most recent advancements for oxide and Cu-based RRAM.
1. Z. Wei, et al., in Electron Devices Meeting (IEDM), (2011), p. 31.4.1.
2. S. Shyh-Shyuan, et al., in Symposium on VLSI Circuits (2009), p. 82.
3. L. Seung Ryul, et al., 2012 IEEE Symposium on VLSI Technology, 71 (2012).
4. B. Govoreanu , et al., Ext. Abstr. SSDM Conf.,Nagoya, Japan, pp.1005 (2011).
5. R. A. Miron and K. A. Fichthorn, Journal of Chemical Physics 119, 6210 (2003).
6. S. Clima, et al., Applied Physics Letters 100, 133102 (2012).
7. L. Goux, et al., in Symposium on VLSI Technology (VLSIT), (2012), p. 69.
8. R. Degraeve, et al., 2012 IEEE Symposium on VLSI Technology (2012).