AVS 60th International Symposium and Exhibition
    Electronic Materials and Processing Friday Sessions
       Session EM+NS+TF-FrM

Invited Paper EM+NS+TF-FrM1
Growth and Properties of MoS2 and MoXy (X=S,Se and alloys thereof, y=1.5…2) on SiO2 and Cu(111)

Friday, November 1, 2013, 8:20 am, Room 102 A

Session: Nanoelectronic Interfaces, Materials, and Devices/Crystalline Oxides on Semiconductors
Presenter: L. Bartels, University of California, Riverside
Correspondent: Click to Email

I will present experimental methods for the preparation of MoS2 and MoXy (X=S,Se and alloys thereof, y=1.5…2) on SiO2 and Cu(111). We investigated the films' structures by low energy electron microscopy and variable temperature scanning tunneling microscopy. The optical properties were probed in the range between room temperature and 5K. For sulfur-selenium alloys, we find an optical bandgap that is tunable between the values observed for pure MoS2 and MoSe2 monolayers. Investigation of the chemical properties of the materials show high affinity of the sulfur-deficient materials for adsorption of oxygenate species.