| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Friday Sessions |
| Session EM+NS+SS+TF-FrM |
| Session: | Growth and Characterization of Group III-Nitride Materials |
| Presenter: | A.G. Melton, University of North Carolina at Charlotte |
| Authors: | A.G. Melton, University of North Carolina at Charlotte P. Davis, University of North Carolina at Charlotte M. Uddin, University of North Carolina at Charlotte E.B. Stokes, University of North Carolina at Charlotte |
| Correspondent: | Click to Email |
Thermodynamic calculations have predicted that elevated nitrogen pressure over the InxGa1-xN growth surface will suppress indium evaporation, thus enabling growth at higher temperature. This is expected to result in both better adatom mobility on the growth surface and improved pyrolization efficiency of ammonia (thus reducing nitrogen vacancies). These two effects are expected to result in improved internal quantum efficiency of high indium InxGa1-xN materials. A vertical, rotating susceptor MOCVD reactor capable of superatmospheric growth pressures (up to 3 bar, absolute) has been designed and built at UNC Charlotte. The intended application of this reactor is to explore the use of elevated growth pressure in suppressing nitrogen vacancies, indium desorption, and phase separation in high-indium InxGa1-xN alloys, such as those within the “green gap”. The reactor is capable of growth on a single 2” diameter wafer at a time and has been designed to minimize turbulence using computational fluid dynamics simulations. The reactor design and results from early growth runs will be presented here. X-ray diffraction and confocal photoluminescence are used to evaluate macroscopic and spatially resolved phase separation, respectively, as well as composition and crystal quality.