| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Friday Sessions |
| Session EM+NS+SS+TF-FrM |
| Session: | Growth and Characterization of Group III-Nitride Materials |
| Presenter: | A. Acharya, Georgia State University |
| Authors: | A. Acharya, Georgia State University N. Nepal, Naval Research Laboratory C. Eddy, Naval Research Laboratory B. Thoms, Georgia State University |
| Correspondent: | Click to Email |
The surface bonding configuration and kinetics of hydrogen desorption from InN grown on Si (100) by plasma-assisted atomic layer epitaxy have been investigated. High resolution electron energy loss spectra exhibited loss peaks assigned to a Fuchs-Kliewer surface phonon, N-N and N-H surface species. The observation of N-H but no In-H surface species suggests N-polar InN. Isothermal desorption data was best fit by the first-order desorption kinetics with an activation energy of 0.88 ± 0.06 eV and pre-exponential factor of (1.5 ± 0.5) ×105 s-1. The lower activation energy, the first-order desorption kinetics and surface N-N vibrations are attributed to surface defects.