| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Friday Sessions |
| Session EM+NS+SS+TF-FrM |
| Session: | Growth and Characterization of Group III-Nitride Materials |
| Presenter: | S. Gamage, Georgia State University |
| Authors: | S. Gamage, Georgia State University J.K.S. Nanayakkara, Georgia State University M.K.I. Senevirathna, Georgia State University A.G. Melton, University of North Carolina at Charlotte I.T. Ferguson, University of North Carolina at Charlotte N. Dietz, Georgia State University |
| Correspondent: | Click to Email |
The large band gap tunability possible in ternary InGaN alloys opens new avenues in the field of advanced optoelectronics device structures. However, the stabilization of indium-rich InGaN epilayers is still a big challenge due large differences in the partial pressures and lattice parameters between the binaries InN and GaN, respectively. As a potential pathway to stabilize ternary InGaN alloys in a larger composition range and to reduce the temperature gap, we explore the growth of InGaN epilayers under super atmospheric pressures of up to 15 bars.
Starting from InN, we report in this contribution on the growth of indium-rich ternary In1-xGaxN epilayers (with 0 ≤ x < 0.4 ) and study the influence of the pulse separations on the phase purity and stability of indium-rich In1-xGaxN epilayer and resulting structural and optical layer properties. The structural InGaN epilayers are characterized by x-ray diffraction, Raman spectroscopy, and by infrared (IR) reflectance. The free carrier concentrations have been estimated by analyzing the IR-reflectance spectra and by Raman A1(LO) mode line shape analysis.