| AVS 59th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | GR+EM+NS+SS+TF-ThA1 X-ray Photoelectron Spectroscopy Investigation of the Valence and Conduction Band Offset at Hexagonal a-BN:H/Si Interfaces S. King, M. French, J. Bielefeld, Intel Corporation, M. Jaehnig, Intel Coroporation, M. Kuhn, B. French, Intel Corporation |
| 2:20pm | GR+EM+NS+SS+TF-ThA2 Monolayer Graphene-Boron Nitride 2D Heterostructures R. Cortes, J. Lahiri, E. Sutter, P.W. Sutter, Brookhaven National Laboratory |
| 2:40pm | GR+EM+NS+SS+TF-ThA3 Invited Paper Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers J. Lou, S. Najmaei, Z. Liu, Y. Zhan, P. Ajayan, Rice University |
| 3:40pm | GR+EM+NS+SS+TF-ThA6 Formation of Silicene and 2D Si Sheets on Ag(111): Growth Mode, Structural and Electronic Properties P. Vogt, Technical University of Berlin, Germany, T. Bruhn, A. Resta, B. Ealet, CNRS CiNaM, Marseille, France, P. De Padova, CNR-ISM, Rome, Italy, G. Le Lay, CNRS CiNaM, Marseille, France |
| 4:00pm | GR+EM+NS+SS+TF-ThA7 Yttria-monolayer on Pt(111) Supported Graphene: A Novel Two Dimensional Heterostructure and its Affect on Charge Doping of Graphene R. Addou, A. Dahal, M. Batzill, University of South Florida |
| 4:20pm | GR+EM+NS+SS+TF-ThA8 Invited Paper Probing the BCN-triangle by Computations—Outside the Carbon Corner Yakobson, Rice University |
| 5:00pm | GR+EM+NS+SS+TF-ThA10 Invited Paper Single-layer MoS2 Devices and Circuits A. Kis, EPFL, Switzerland |