| AVS 59th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | GR+EM+NS+PS+SS+TF-MoM1 Synthesis Ingredients Enabling Low Noise Epitaxial Graphene Applications D.K. Gaskill, L.O. Nyakiti, V.D. Wheeler, U.S. Naval Research Lab, A. Nath, George Mason Univ., V.K. Nagareddy, Newcastle University, UK, R.L. Myers-Ward, N.Y. Garces, S.C. Hernández, S.G. Walton, U.S. Naval Research Lab, M.V. Rao, George Mason Univ., A.B. Horsfall, Newcastle Univ., UK, C.R. Eddy, Jr., U.S. Naval Research Lab, J.S. Moon, HRL Labs LLC |
| 8:40am | GR+EM+NS+PS+SS+TF-MoM2 Growth of Graphene by Catalytic Decomposition of Ethylene on Cu(100) and Cu(111) With and Without Oxygen Predosing Z.R. Robinson, P. Tyagi, T. Mowll, C.A. Ventrice, Jr., University at Albany- SUNY, K. Clark, A.-P. Li, Oak Ridge National Laboratory |
| 9:00am | GR+EM+NS+PS+SS+TF-MoM3 Impact of Growth Parameters on Uniformity of Epitaxial Graphene L.O. Nyakiti, V.D. Wheeler, R.L. Myers-Ward, J.C. Culbertson, U.S. Naval Research Laboratory, A. Nath, George Mason University, N.Y. Garces, U.S. Naval Research Laboratory, J. Howe, Oak Ridge National Laboratory, C.R. Eddy, Jr., D.K. Gaskill, U.S. Naval Research Laboratory |
| 9:20am | GR+EM+NS+PS+SS+TF-MoM4 Uniform Epitaxial Growth of Charge Neutral Quasi-Free-Standing Monolayer Graphene on a 6H-SiC(0001) Surface by Combination of Metal Silicidation and Intercalation H. Shin, I. Song, C.-Y. Park, J.R. Ahn, Sungkyunkwan University, Republic of Korea |
| 9:40am | GR+EM+NS+PS+SS+TF-MoM5 Invited Paper Epitaxial Graphene on Ir(111) - A Playground for the Fabrication of Graphene Hybrid Materials T.W. Michely, Universität zu Köln, Germany |
| 10:40am | GR+EM+NS+PS+SS+TF-MoM8 Invited Paper Graphene Growth Studied with LEEM, PEEM, EELS, ARPES, MEIS, and STM R.M. Tromp, J.B. Hannon, M.W. Copel, S.-H. Ji, F.M. Ross, IBM T.J. Watson Research Center |
| 11:20am | GR+EM+NS+PS+SS+TF-MoM10 Spatial Confinement of Epitaxy of Graphene on Microfabricated SiC to Suppress Thickness Variation H. Fukidome, T. Ide, H. Handa, RIEC, Tohoku Univ., Japan, Y. Kawai, Tohoku Univ., Japan, F. Fromm, Univ. Erlange-Nürnberg, Germany, M. Kotsugi, T. Ohkouchi, JASRI/SPring-8, Japan, H. Miyashita, Tohoku Univ., Japan, Y. Enta, Hirosaki Univ., Japan, T. Kinoshita, JASRI/SPring-8, Japan, Th. Seyller, Univ. Erlange-Nürnberg, Germany, M. Suemitsu, RIEC, Tohoku Univ., Japan |
| 11:40am | GR+EM+NS+PS+SS+TF-MoM11 Three-Dimensional Graphene Architecture Growth and Its Facile Transfer to Three-Dimensional Substrates J.-H. Park, Sungkyunkwan University, Republic of Korea, H.-J. Shin, J.Y. Choi, Samsung Advanced Institute of Technology, Republic of Korea, J.R. Ahn, Sungkyunkwan University, Republic of Korea |