AVS 59th Annual International Symposium and Exhibition
    Electronic Materials and Processing Tuesday Sessions

Session EM-TuM
Electrical Testing and Defects in III-V’s

Tuesday, October 30, 2012, 8:00 am, Room 009
Moderators: E.M. Vogel, Georgia Institute of Technology, E.X. Zhang, Vanderbilt University


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:00am EM-TuM1 Invited Paper
Characterization, Modeling and Control of Fermi Level Pinning Phenomena at III-V High-k MOS Gate Stack Interfaces
H. Hasegawa, Hokkaido University and RIKEN, Japan
8:40am EM-TuM3
An Investigation into the Origin of Anomalous Frequency Dispersion in Accumulation Capacitance of MOS Devices on III-V Substrates
R.V. Galatage, D.M. Zhernokletov, H. Dong, B. Brennan, C.L. Hinkle, R.M. Wallace, University of Texas at Dallas, E.M. Vogel, Georgia Institute of Technology
9:00am EM-TuM4
Evaluation of Atomic Layer Deposited High-k Dielectrics on GaAs
H.J. Lim, Y.J. Choi, S.H. Lee, Seoul National University, Republic of Korea, J.H. Ku, N.I. Lee, Samsung Electronics Co. Ltd., Republic of Korea, H.J. Kim, Seoul National University, Republic of Korea
9:20am EM-TuM5 Invited Paper
High Energy XPS and Electrical Characterisation Studies of Metal Oxide Semiconductor Structures on Si, GaAs and InGaAs
G.J. Hughes, L.A. Walsh, Dublin City University, Ireland, P.K. Hurley, J.H. Lin, Tyndall National Laboratory, Ireland, J.C. Woicik, National Institute of Standards and Technology
10:40am EM-TuM9
Metastable Centers and Localized States in AlGaN/AlN/GaN Heterostructures Studied by C-V, Admittance Spectroscopy, and DLTS
A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova, Institute of Rare Metals, Russian Federation, S.J. Pearton, F. Ren, L. Lu, University of Florida, S.Y. Karpov, Soft-Impact, Ltd, Russian Federation, W. Lim, Samsung LED, Republic of Korea
11:00am EM-TuM10
Characterizations of Proton-irradiated GaN and 4H-SiC by KOH Etching
H.-Y. Kim, Korea University, Y.J. Shin, W. Bahng, Korea Electrotechnology Research Institute, J. Kim, Korea University
11:20am EM-TuM11 Invited Paper
Trapping Centers in High -k Dielectrics for MOS Devices
P. Lenahan, Pennsylvania State University