| AVS 59th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EM+TF+OX+GR-MoM1 Invited Paper Surface Preparation and Dielectric Growth for Graphene-based Devices R.M. Wallace, University of Texas at Dallas |
| 9:00am | EM+TF+OX+GR-MoM3 Invited Paper Antimonide-Based P-Channel MOSFET: Progress and Challenges S. Oktyabrsky, A. Greene, S. Madisetti, P. Nagaiah, M. Yakimov, R. Moore, S. Novak, H. Bakhru, V. Tokranov, University at Albany-SUNY |
| 9:40am | EM+TF+OX+GR-MoM5 Interface Study of the Atomic Layer Deposited Al2O3 on Al0.25Ga0.75N X. Qin, B. Brennan, H. Dong, R.M. Wallace, The University of Texas at Dallas |
| 10:00am | EM+TF+OX+GR-MoM6 Ideal Monolayer Nitridation of Semiconductors using a Nitrogen Radical Generator A.T. Lucero, J. Kim, University of Texas at Dallas |
| 11:00am | EM+TF+OX+GR-MoM9 Characterization of ALD Laminated Gate Dielectrics on GaN MOSCAPs D. Wei, T. Hossain, Kansas State University, N. Nepal, N.Y. Garces, Naval Research Laboratory, H.M. Meyer III, Oak Ridge National Laboratory, C.R. Eddy, Jr., Naval Research Laboratory, J.H. Edgar, Kansas State University |
| 11:20am | EM+TF+OX+GR-MoM10 Invited Paper Passivation of Interfacial Defects in GaAs and Other III-Vs J. Robertson, Cambridge University, UK |