| AVS 59th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM+TF+AS-ThA1 Invited Paper AlN-based Technology for Deep UV and High-power Applications Z. Sitar, HexaTech, Inc. & North Carolina State University, B. Moody, S. Craft, R. Schlesser, R. Dalmau, J. Xie, S. Mita, HexaTech, Inc., T. Rice, J. Tweedy, J. LeBeau, L. Hussey, R. Collazo, B. Gaddy, D. Irving, North Carolina State University |
| 2:40pm | EM+TF+AS-ThA3 Atomic Layer Deposition of AlN Thin Films as Gate Dielectrics for Wide Bandgap Semiconductors Y.-C. Perng, J.P. Chang, D. Chien, University of California at Los Angeles |
| 3:00pm | EM+TF+AS-ThA4 Low-Temperature Behavior of the Surface Photovoltage in p-type GaN J.D. McNamara, M. Foussekis, A.A. Baski, M.A. Reshchikov, Virginia Commonwealth University |
| 3:40pm | EM+TF+AS-ThA6 Controlling GaN Polarity on GaN Substrates J.K. Hite, M.E. Twigg, J.A. Freitas, Jr., M.A. Mastro, J.R. Meyer, I. Vurgaftman, S. O'Connor, N.J. Condon, F.J. Kub, S.R. Bowman, C.R. Eddy, Jr., U.S. Naval Research Laboratory |
| 4:00pm | EM+TF+AS-ThA7 Invited Paper Direct Green and Yellow Light Emitting Diodes – Polarization Control and Epitaxy C. Wetzel, T. Detchprohm, Rensselaer Polytechnic Institute |
| 4:40pm | EM+TF+AS-ThA9 The Influence of Substrate and Gas Phase Temperatures on the Properties of InN Epilayers M.K.I. Senevirathna, S.D. Gamage, R. Atalay, R.L. Samaraweera, A.G.U. Perera, Georgia State University, B. Kucukgok, A.G. Melton, I. Ferguson, University of North Carolina at Charlotte, N. Dietz, Georgia State University |
| 5:00pm | EM+TF+AS-ThA10 Absence of Electron Accumulation at InN(11-20) Cleavage Surfaces H. Eisele, Technische Universität Berlin, Germany, S. Schaafhausen, Forschungszentrum Jülich, Germany, A. Lenz, Technische Universität Berlin, Germany, A. Sabitova, Forschungszentrum Jülich, Germany, L. Ivanova, M. Dähne, Technische Universität Berlin, Germany, Y.-L. Hong, S. Gwo, National Tsing-Hua University, Taiwan, P. Ebert, Forschungszentrum Jülich, Germany |
| 5:20pm | EM+TF+AS-ThA11 Dependence of Gallium Incorporation and Structural Properties of Indium-rich InxGa1-xN Epilayers on Ammonia - MO Precursor Pulse Separation S.D. Gamage, R. Atalay, M.K.I. Senevirathna, R.L. Samaraweera, Georgia State University, A.G. Melton, I. Ferguson, University of North Carolina at Charlotte, N. Dietz, Georgia State University |
| 5:40pm | EM+TF+AS-ThA12 MBE-Growth of Coherent-Structure InN/GaN Short-Period Superlattices as Ordered InGaN Ternary Alloys for III-N Solar Cell Application A. Yoshikawa, K. Kusakabe, N. Hashimoto, T. Okuda, T. Itoi, Chiba University, Japan |