| AVS 58th Annual International Symposium and Exhibition | |
| Plasma Science and Technology Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS1-TuA1 Feature Profile Evolution for HARC Etching in SiO2 Paul Moroz, Tokyo Electron US Holdings Ltd., S.-Y. Kang, Tokyo Electron Ltd., Japan |
| 2:20pm | PS1-TuA2 Invited Paper Hybrid Strip Process to Minimize Low-k Dielectric Damage Eric A. Hudson, T. Choi, K. Takeshita, S. Sirard, B. Ji, M. Kato, M. Moravej, O. Turmel, G.A. Delgadino, S. Heo, A.D. Bailey III, Lam Research Corp. |
| 3:00pm | PS1-TuA4 Model for High Aspect Ratio Dielectric Etch Process in a Capacitively-Coupled Plasma Jason Kenney, A. Balakrishna, A. Agarwal, N. Misra, S. Rauf, K. Collins, Applied Materials, Inc. |
| 4:00pm | PS1-TuA7 Plasma-induced Damage Reduction in Porous SiOCH Dielectrics by Replacement of H2 and N2 by CH2F2 and Ar in Fluorocarbon Based Plasmas Laurent Souriau, F. Lazzarino, L. Carbonell, I. Ciofi, P. Verdonck, J.F. de Marneffe, M. Baklanov, IMEC, Belgium |
| 4:20pm | PS1-TuA8 Using Pulsed Power to Control Etch Properties of SiO2 in Ar/CF4/O2Capacitively Coupled Plasmas Sang-Heon Song, M.J. Kushner, University of Michigan |
| 4:40pm | PS1-TuA9 Chemical Mechanisms for Dielectric Product Development Ajit Balakrishna, A. Agarwal, J.A. Kenney, S. Belostotskiy, S. Rauf, K. Collins, Applied Materials, Inc. |
| 5:00pm | PS1-TuA10 Optimization of CF3I Process for Low-K Etching A.J. Gildea, J.C. Long, E. Eisenbraun, College of Nanoscale Science and Engineering, the University at Albany-SUNY, Vincent Omarjee, F. Doniat, N. Stafford, C. Dussarrat, American Air Liquide – Delaware Research and Technology Center |
| 5:20pm | PS1-TuA11 Mechanism of Highly Selective SiO2 Etching over Si3N4, Si and Photoresist Using Hydro-Fluorocarbon Gases Y. Miyawaki, Y. Kondo, K. Asano, Makoto Sekine, K. Ishikawa, T. Hayashi, K. Takeda, H. Kondo, M. Hori, Nagoya University, Japan |