AVS 58th Annual International Symposium and Exhibition
    Plasma Science and Technology Division Friday Sessions

Session PS-FrM
Plasma Modeling

Friday, November 4, 2011, 8:20 am, Room 201
Moderator: Kallol Bera, Applied Materials, Inc.


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am PS-FrM1
Delivering Activation Energy to Surfaces in Atmospheric Pressure Plasmas: Local and Remote
Z. Xiong, N.Yu. Babaeva, Mark Kushner, University of Michigan
8:40am PS-FrM2
Kinetic Effects in Low Pressure Capacitively Coupled Plasmas
Alex Likhanskii, P. Stoltz, Tech-X Corp.
9:00am PS-FrM3 Invited Paper
Challenges in Modeling of Plasma Interactions in Medicine and Biology: What Insights Can You Expect?
Natalia Yu Babaeva, M.J. Kushner, University of Michigan
10:00am PS-FrM6
Magnetic Field - Plasma Interaction in Low Pressure VHF Capacitively Coupled Plasmas using PIC-MCC/Fluid Hybrid Model
Kallol Bera, A. Agarwal, S. Rauf, K. Collins, Applied Materials, Inc.
10:20am PS-FrM7
Simulations of SF6 Plasma Etching in the GEC Reference Cell
Sergio Lopez-Lopez, Quantemol - University College London, UK, J.J. Munro, D. Brown, Quantemol Ltd., UK, J. Tennyson, University College London, UK
10:40am PS-FrM8
Simulation of InP Etching under ICP Ar/Cl2/N2 Plasma Discharge: Role of N2 in the Sidewall Passivation
R. Chanson, Ahmed Rhallabi, M.C. Fernandez, Ch. Cardinaud, J.P. Landesman, Institut des Matériaux Jean Rouxel (IMN), France, S. Bouchoule, A. Talneau, Laboratoire de Photonique et de Nanostructures (LPN), France
11:00am PS-FrM9
Three-Dimensional Modeling and Formation Mechanisms of Atomic-Scale Surface Roughness during Si Etching in Chlorine-Based Plasmas
Hirotaka Tsuda, Y. Takao, K. Eriguchi, K. Ono, Kyoto University, Japan
11:20am PS-FrM10
Control of the Ion Energy Distribution on a Plasma Electrode
Paola Diomede, D.J. Economou, V.M. Donnelly, University of Houston
11:40am PS-FrM11
Molecular Dynamic Simulation for Selective Etching of Silicon Nitride and Silicon Oxide by Hydrofluorocarbon Ions
Ryota Shigekawa, M. Isobe, Osaka University, Japan, M. Fukasawa, T. Tatsumi, Sony Corporation, Japan, S. Hamaguchi, Osaka University, Japan