| AVS 58th Annual International Symposium and Exhibition | |
| Plasma Science and Technology Division | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS+SE-MoA1 Mechanical Analysis of the Line Edge Roughness in the sub-20nm Line Patterns SangWuk Park, K.H. Baek, Samsung Electronics Co., Ltd, Republic of Korea, S.H. Choi, J.S. Hong, Lam Research Corporation, K.S. Shin, Y.G. Shin, H.G. Kang, Samsung Electronics Co., Ltd, Republic of Korea |
| 2:20pm | PS+SE-MoA2 Dependence of ArF Photoresist Polymer Structure on Line-Edge-Roughness Formation during Plasma Etching Processes Takuji Uesugi, A. Wada, Tohoku University, Japan, S. Maeda, K. Kato, A. Yasuda, S. Sakuma, Mitsubishi Rayon, Japan, S. Samukawa, Tohoku University, Japan |
| 2:40pm | PS+SE-MoA3 193nm Photoresist Pre-Treatments Before Plasma Transfer to Improve LWR Transfer and CD Control Erwine Pargon, CNRS-LTM, France, L. Azarnouche, ST Microelectronics, France, M. Fouchier, K. Menguelti, O. Joubert, CNRS-LTM, France |
| 3:00pm | PS+SE-MoA4 Plasma Smoothing of Extreme Ultraviolet Photoresist: LWR Reduction at 30nm Half Pitch Efrain Altamirano-Sanchez, A. Pret Vaglio, R. Gronheid, D. Marc, W. Boullart, IMEC, Belgium |
| 3:40pm | PS+SE-MoA6 Controlling Line Edge Roughness for Aggressively Scaled CMOS Devices by Reducing Organic Underlayer Deformation Hiroyuki Miyazoe, S.U. Engelman, M. Glodde, M.A. Guillorn, M. Brink, A. Banik, W.S. Graham, E.M. Sikorski, N.C.M. Fuller, IBM T.J. Watson Research Center |
| 4:00pm | PS+SE-MoA7 Invited Paper Single Digit Nano Plasma Etching Deirdre Olynick, Lawrence Berkeley National Laboratory |
| 4:40pm | PS+SE-MoA9 Ar and He Plasma Pretreatments of Organic Masking Materials for Performance Improvements during Plasma Pattern Transfer Dominik Metzler, F. Weilnboeck, N. Kumar, G.S. Oehrlein, University of Maryland, S. Engelmann, R.L. Bruce, N.C.M. Fuller, IBM T.J. Watson Research Center |
| 5:00pm | PS+SE-MoA10 Sub-32nm Node Mask Patterning for Deep Silicon Trench Etch Justin Yarmush, H. Haga, Y. Chiba, K. Kumar, P. Biolsi, TEL Technology Center, America, LLC, J. An, H. Hichri, B. Dirahoui, X. Li, IBM Microelectronics, R. Wise, IBM Research |
| 5:20pm | PS+SE-MoA11 Quantitative Determination of the Mechanism of Anisotropic Silicon Etching Melissa Hines, M.F. Faggin, K. Bao, A. Gupta, B. Aldinger, Cornell University |