| AVS 58th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing Division | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EM-WeM2 Feature-Scale Modeling of Diffusion Barrier and Metal Seed Physical Vapor Deposition Processes R.A. Arakoni, J.-P. Trelles, D. Kim, M. Khabibullin, S. Nikonov, D. Zierath, Intel Corporation |
| 8:40am | EM-WeM3 Invited Paper Ultralow-k PECVD pSiCOH Dielectrics and their Implementation in VLSI Interconnects Alfred Grill, S.M. Gates, IBM Research, E.T. Ryan, GlobalFoundries, S. Nguyen, IBM Research |
| 9:20am | EM-WeM5 Limitations in Dielectric Constant Scaling for low-k a-SiC(N):H Diffusion Barriers in Nanoelectronic Applications Sean King, D. Jacob, Intel Corporation, M. Liu, D.W. Gidley, University of Michigan |
| 9:40am | EM-WeM6 Fundamental Characterization of Amorphous Hydrogenated Boron Carbide Toward its use as a Low-k Dielectric Material Bradley Nordell, S. Karki, C. Clayton, M.S. Driver, M.M. Paquette, A.N. Caruso, University of Missouri-Kansas City |
| 10:40am | EM-WeM9 Invited Paper Robust PECVD Ultra-Low-k Dielectric (κ≤2.55) Development for sub-28nm Generations Dimitri Kioussis, E.T. Ryan, GLOBALFOUNDRIES, S.M. Gates, IBM T.J. Watson Res. Ctr., A. Madan, N. Klymko, C. Parks, S. Molis, IBM, R. Augur, GLOBALFOUNDRIES, H. Masuda, Toshiba America, D. Restaino, IBM, Z. Sun, GLOBALFOUNDRIES, S. Hosadurga, IBM, S. Cohen, IBM T.J. Watson Res. Ctr., K. Virwani, IBM Almaden Res. Ctr., A. Grill, IBM T.J. Watson Res. Ctr. |
| 11:20am | EM-WeM11 Invited Paper Molecular Strengthening Mechanisms for Low-k Dielectrics Reinhold Dauskardt, Stanford University |