| AVS 58th Annual International Symposium and Exhibition | |
| Thin Film Division | Tuesday Sessions |
| Session TF-TuP |
| Session: | Thin Films Poster Session |
| Presenter: | Haider Shukur, Kogakuin University, Japan |
| Authors: | H. Shukur, Kogakuin University, Japan M. Sato, Kogakuin University, Japan I. Nakamura, Tokyo Metropolitan Industrial Technology Research Institute, Japan I. Takano, Kogakuin University, Japan |
| Correspondent: | Click to Email |
Titanium dioxide (TiO2) has been fundamentally used as a photocatalytic application to decompose environmental pollution materials. TiO2 can generate active oxygen by exposing to sunlight and also is harmless to the environment and the low cost material, so that it is expected to use as an element of a clean energy system in the future .
TiO2 shows relatively high reactivity and chemical stability under UV light whose energy exceeds the band gap of 3.2 eV for the anatase crystalline phase and 3.0 for the rutile crystalline phase. Many techniques has been examined to increase its activity under visible light region.
N+ ion irradiation method has been used by many researchers because it can provide an activated TiO2 in both of visible and UV light. However the collision between ion and film causes a defect in film structure as causing a decline in photo-functional property.
In this study structural, chemical and photo-functional properties of TiO 2 thin film with a rutile structure were studied after irradiation by various doses of N + ion beam under various temperatures. Reactive magnetron sputtering method was employed to prepare TiO2 thin film on glass substrate (corning #1737). Ti-O was sputtered from Ti target in an Ar / O2 gas and the substrate was hated at 300 oC. The total film thickness was around 180 nm with a deposition rate of 0.025nm/sec. N+ ion was irradiated to TiO2 thin film under 15 keV in acceleration voltage, and 40 µA/cm2 in ion current density with a various implantation doses. Substrate temperature was set at a room temperature (25 oC), 100, 200 and 300 oC through ion irradiation processes. The structure was determined by X-ray diffraction (XRD: MAC Science High quality XG M18XCE) with CuKα (0.154nm) radiation at an incident angle of 0.3º, and the composition was characterized by X-ray photoelectron spectroscopy. The photocatayst property was measured by a MB immersion test. The spectrophotometer (SHIMADZU UV-2550) was used to measure the difference in light absorption at a wave length of 665nm.
The increasing in the Full Wave Half Maximum (FWHM) of XRD measurements with N+ ion irradiation under 25oC refers to declining of the crystal structure of the TiO2 thin film. On the other hand HMFW decreased by increasing the substrate temperature and closed to the value of the as-deposited film prepared under 300 oC. Thus the improvement of photocatalytic property under visible light was increased from 9.1% at 25 oC to 25.7% at 300 oC under the same N+ irradiation (2.5x1015ions/cm2).