AVS 58th Annual International Symposium and Exhibition
    Surface Science Division Friday Sessions
       Session SS-FrM

Paper SS-FrM1
Towards Controlled Growth of a Single-Layer of MoS2

Friday, November 4, 2011, 8:20 am, Room 107

Session: Surface Science on Graphene
Presenter: Dezheng Sun, University of California, Riverside
Authors: D. Sun, University of California, Riverside
W. Lu, University of California, Riverside
D. Kim, University of California, Riverside
J. Mann, University of California, Riverside
L. Bartels, University of California, Riverside
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MoS2 is a semiconducting material consisting of sulfur-molybenum-sulfur tripledecker layers loose bound by van der Waals interactions. MoS2 has been used technologically for a long time, for instance as lubricant, where similar to graphite its layered character was employed. Recently, its electronic characteristics have attained increased attention with the finding that it transitions from an indirect bandgap semiconductor at 1.6eV gap to a direct bandgap one at 1.9eV gap at the transition from multilayers to a single layer. A transistor has been constructed from a MoS2 and shown appreciable properties. The increased bandgap and high fluorescence yield may also suggest applications of the material for photonic or photocatalytic applications.

MoS2 can be exfoliated mechanically similar to graphene. While this method is simple, it is hard to control and not amendable to mass production of thin films. Solution-based processes have been proposed and may provide a scalable source of a mixture of single and multilayer material. Here we show an alternative avenue for the fabrication of MoS2 monolayers: growth of MoS2 on a sulfur-preloaded copper surface. In contrast to all other methods, this route has the potential of providing exclusively monolayer material, as the sulfur source is only available until the substrate is covered. Practically, this approach is related to the growth of graphene monolayers on copper or ruthenium films, where segregation of carbon to the surface is employed in aggregating a carbonaceous layer that transforms into graphene under the correct conditions.

Small MoS2 triangles of a few nanometers in size have been grown previously on gold in a dilute H2S athmosphere. Here we show significantly larger patches, tens of nanometers in size. In contrast to gold, copper forms a multitude of sulfur surface coverages and also readily absorbs sulfur into the bulk. Thus, we can preload the substrate with a specific amount sulfur using an easy to handle liquid precursor, benzenethiol. In previous work we have shown that heating to below 400K removes the phenyl group of benzenethiol reliably from copper leaving sulfur coverages behind.