| AVS 58th Annual International Symposium and Exhibition | |
| Plasma Science and Technology Division | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | Zhuo Chen, University of Houston |
| Authors: | Z. Chen, University of Houston J.A. Mucha, University of Houston V.M. Donnelly, University of Houston D.J. Economou, University of Houston Y. Lee, Columbia University A.J. Akey, Columbia University I.P. Herman, Columbia University |
| Correspondent: | Click to Email |
Amorphous silicon deposition and nano-crystallization experiments were performed in a novel reactor with rotating substrates. Separate plasma sources were used for deposition (a capacitively coupled silane/helium plasma) and crystallization (an inductively coupled hydrogen plasma). Substrates were exposed sequentially and repeatedly to the deposition and crystallization plasmas for different times by varying the rotation speed. Radical concentrations in the plasma were monitored by optical emission spectroscopy while stable products were measured using a mass spectrometer. Films were characterized by spectroscopic ellipsometry (thickness, optical constants), Fourier transform infrared absorption (silicon-hydrogen bonding, hydrogen concentration), Raman spectroscopy and X-Ray diffraction (crystalline structure, degree of crystallization). Results will be presented for different plasma operating conditions, substrate temperatures, and exposure times in the deposition and crystallization plasmas. The effect of “cross-talk” between the two plasmas and methods to prevent it will also be discussed.
Supported by the University of Houston GEAR Program and DoE