|AVS 58th Annual International Symposium and Exhibition|
|Nanometer-scale Science and Technology Division||Tuesday Sessions|
|Session:||Nanowires and Nanoparticles II: Characterization and Synthesis|
|Presenter:||L. Samuelson, Lund University, Sweden|
|Correspondent:||Click to Email|
The field of self-assembled growth of semiconductor nanowires has emerged as a powerful way to form advanced materials and devices on the 10nm-scale. In this talk I will review the state of the art of the field, exemplified by our recent progress in growing ideal and defect-free III-V and III-nitride nanowires, on either III-V or silicon as substrates. I will discuss the hot materials physics aspects of structural control and the influence of zincblende vs wurtzite crystal structures on materials properties. I will then review recent progress in realizing various electronic as well as opto-electronic devices, such as nanowire field-effect transistors, tunnel devices, solar-cells as well as light-emitting diodes.