AVS 58th Annual International Symposium and Exhibition
    Nanometer-scale Science and Technology Division Monday Sessions
       Session NS+EM-MoM

Invited Paper NS+EM-MoM8
Adding New Capabilities to Silicon CMOS via Deterministic Nanowire Assembly

Monday, October 31, 2011, 10:40 am, Room 203

Session: Nanowires and Nanoparticles I: Assembly and Devices
Presenter: Theresa Mayer, Penn State University
Authors: T.S. Mayer, Penn State University
M. Li, Penn State University
T. Morrow, Penn State University
J. Kim, Penn State University
B. Won, Penn State University
K. Sun, Penn State University
X. Zhong, Penn State University
K. Liddell, Penn State University
J.S. Mayer, Penn State University
C.D. Keating, Penn State University
Correspondent: Click to Email
Integrating functionalized nanowires directly onto Si CMOS chips has the potential to combine highly selective and sensitive chemical and/or biological sensing capabilities with electronic signal processing in a single ultra compact, low power platform. Conventional integrated circuit manufacturing methods place considerable limits on the range of and number of different materials and molecules that can be incorporated onto Si chips, making it difficult to realize this goal. This talk provide an overview a new deterministic assembly approach that uses electric field forces to direct many different types of bioprobe-coated nanowires to specific regions of the chip and to provide accurate registration between each individual nanowire and a specific transistor on the chip. This is achieved by synchronizing sequential injections of nanowires carrying different bioprobe molecules with a programmed spatially-confined electric field profile that directs nanowire assembly. Subsequent back-end lithographic and metal deposition processes are then used to electrically and mechanically connect all of the nanowire devices to the Si chip at the same time. Using this technique, individual nanowire device integration yields exceeding 90% have been demonstrated with a less than 1% mismatch across three populations of DNA-coated nanowires for arrays with densities of 106 cm-2. The nanowire-bound DNA retained its ability to selectively bind complementary target strands following assembly and device fabrication showing that this process is compatible with these back-end manufacturing steps. The uniformity in the electrical properties of nanowire device arrays that were fabricated using this hybrid integration strategy will also be discussed.