| AVS 58th Annual International Symposium and Exhibition | |
| MEMS and NEMS Group | Friday Sessions |
| Session MN-FrM |
| Session: | Characterization of Materials and Structures at the Micro- and Nano-scale |
| Presenter: | Xinpeng Wang, University of Puerto Rico |
| Authors: | X. Wang, University of Puerto Rico A.V. Sumant, Argonne National Laboratory V. Joshi, Argonne National Laboratory L.E. Ocola, Argonne National Laboratory B. Kabius, Argonne National Laboratory D. Lopez, Argonne National Laboratory |
| Correspondent: | Click to Email |
Due to extraordinary mechanical, optical and electrical properties as predicated by theory, there has been tremendous amount of interest in making diamond nanowires (DNWs) and diamond nano-rods (DNRs). Synthesizing or fabricating these nanostructures is proving to be very challenging. To date, only a few attempts have been reported, either by etching single crystal diamond using focus ion beam (FIB) to produce diamond NRs or by coating Si nanowires with nanocrystalline diamond to produce diamond NWs. We report a top-down method based on e-beam lithography and reactive ion etching of ultrananocrystalline diamond (UNCD) to produce UNCD nanowires (UNCDNWs) with nanowire diameters as small as 30 nm. Since they are produced by lithographic approach (top-down), they can be fabricated at well-defined position with nanometer-scale precision. Compare to other fabrication techniques like FIB, our UNCDNWs maintain intrinsic diamond structure and properties without degradation after fabrication process, which has been confirmed by Raman spectroscopy (ultraviolet and visible), transmission electron microscope (TEM) and electron energy loss spectroscopy (EELS). Preliminary electrical measurement of UNCDNWs will be discussed. The ability to fabricate UNCDNWs provides an opportunity to study the fundamental mechanism of transport processes in UNCDNWs, which will enable new ideas and possibilities for the fabrication of new functional nanoelectronic devices.