AVS 58th Annual International Symposium and Exhibition
    In Situ Spectroscopy and Microscopy Focus Topic Tuesday Sessions
       Session IS-TuP

Paper IS-TuP1
In Situ Infrared Spectroscopy of Oxidation Process of Amorphous Carbon Film, Depending on Substrate Temperatures

Tuesday, November 1, 2011, 6:00 pm, Room East Exhibit Hall

Session: In Situ Spectroscopy and Microscopy Focus Topic Poster Session
Presenter: Masanori Shinohara, Nagasaki University, Japan
Authors: M. Shinohara, Nagasaki University, Japan
Y. Takaki, Nagasaki University, Japan
K. Hara, Nagasaki University, Japan
Y. Takami, Nagasaki University, Japan
Y. Matsuda, Nagasaki University, Japan
H. Fujiyama, Nagasaki University, Japan
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There has been much interest in amorphous carbon films because they have a lot of useful properties: mechanical hardness, chemical inertness, and changeable electrical properties. The films can be deposited at low temperatures by using plasma process. The films have been used as coating materials for mechanical apparatus. The property of the film surface can be change with the addition of the other atoms on the surface. The addition of oxygen atoms to the surface leads the surface hydrophilic. The hydrophilic property on the surface has advantages to the further surface treatment. Therefore, it is important to understand the oxidation process of amorphous films. One of the effective oxidation methods is oxygen plasma exposure. We investigated the plasma oxidation process with in-situ infrared spectroscopy in multiple internal reflection geometry (MIR-IRAS). In this presentation, we focus on the dependence of oxidation process on the substrate temperatures. Infrared spectroscopic studies indicated that the oxygen plasma exposure induced the generation of OH components in the film. It means that carboxyl group would be formed by the exposure. With the increases of the substrate temperatures, the formation of OH components in the film was suppressed; moreover, the hydrophilic property was decreased with the substrate temperatures. On the other hand, the etching rate due to the oxygen plasma exposure was increased with the substrate temperatures. It is suggested that the etching rate is increased with substrate temperature, compared with the preservation of the OH components in the film.