| AVS 58th Annual International Symposium and Exhibition | |
| Helium Ion Microscopy Focus Topic | Tuesday Sessions |
| Session HI-TuP |
| Session: | Aspects of Helium Ion Microscopy Poster Session |
| Presenter: | Gregor Hlawacek, University of Twente, The Netherlands |
| Authors: | G. Hlawacek, University of Twente, The Netherlands A. George, University of Twente, The Netherlands J.E. ten Elshof, University of Twente, The Netherlands R. van Gastel, University of Twente, The Netherlands H. Zandvliet, University of Twente, The Netherlands B. Poelsema, University of Twente, The Netherlands |
| Correspondent: | Click to Email |
Helium Ion Microscopy (HIM) is a new and versatile tool for imaging and characterizing surfaces, buried interfaces, thin films and tackling many other problems in modern material science. HIM utilizes ionized Helium to scan the specimen surface. Secondary electrons created by the impinging ions allow to record morphology images with an unmatched lateral resolution of less than 0.35 nm. In addition, back-scattered ions carry the elemental information of the scattering partner – allowing for a elemental identification of the surface composition.
Here, we report on the visualization of thin self assembled monolayers (SAM) deposited on (001) silicon wafers, covered by a thin native oxide. In particular, SAMs formed by (3-Mercaptopropyl)trimethoxysilane (MPS) and Triethoxy-1H,1H,2H,2H-tridecaflouro-n-octylsilane (TDFOS) have been patterned into a rectangular stripe pattern using a two step gas-phase silanization process. The clever use of channeling into the underlying bulk (001) silicon, together with a work-function based evaluation of the secondary electron data allows a clear assignment of different sample areas to the different chemical species. This is possible for both the electron and the ion generated image. The importance of channeling to distinctly and visibly tag the different SAMs will be demonstrated.