| AVS 58th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Tuesday Sessions |
| Session GR-TuP |
| Session: | Graphene and Related Materials Focus Topic Poster Session |
| Presenter: | Clifford Henderson, Georgia Institute of Technology |
| Authors: | C.L. Henderson, Georgia Institute of Technology L.M. Tolbert, Georgia Institute of Technology H.-W. Chu, Georgia Institute of Technology J. Baltazar, Georgia Institute of Technology J. Kowalik, Georgia Institute of Technology |
| Correspondent: | Click to Email |
Graphene is currently produced typically through one of four routes: (1) some combination of mechanical and chemical exfoliation of graphite, (2) oxidation of graphite to form grapheme oxide which is subsequently deposited onto surfaces and reduceed to grapheme, (3) high temperature processing of SiC, or (4) through high-temperature catalytic methods on metal surfaces using simple carbon precursors such as methane. Some applications for grapheme would benefit from low temperature methods (<400 ⁰C), and the first two methods mentioned above can inherently provide access to such low processing temperatures. However, simple exfoliation of graphite has only been demonstrated to produce relatively small, poorly controlled grapheme flakes that are not easily processed due to their limited solubility in solvents and lack of methods for further assembly into larger structures. Therefore, we have been investigating the ability to utilize grapheme oxide (GO) flakes as a soluble grapheme precursor that can be assembled onto surfaces to form both continuous grapheme films and directly form patterned grapheme microstructures. We will present a process in which we deposit and pattern aminosilane monolayers on a substrate, pattern them using lithographic techniques, and utilize such aminosilane patterns to control where GO assembles on the surface and subsequently is reduced to form grapheme. It will be demonstrated that by producing aminosilane monolayers that are dense and which possess a large fraction of non-hydrogen bonded amine terminal groups, continuous grapheme oxide and grapheme films and microstructures can be assembled on substrates. It will be shown that by subjecting the resulting assembled grapheme on such aminosilane layers to modest thermal treatments, that stable n-doped grapheme can be produced. The materials produced via such methods will be discussed in terms of their spectroscopic (e.g. Raman) and electrical properties (e.g. I-V curves for FET devices, carrier concentrations, mobilities, etc.)