| AVS 58th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Monday Sessions |
| Session GR-MoM |
| Session: | Graphene Growth |
| Presenter: | Matthias Batzill, University of South Florida |
| Authors: | M. Batzill, University of South Florida J. Lahiri, Brookhaven National Laboratory I.I. Oleynik, University of South Florida L. Adamska, University of South Florida |
| Correspondent: | Click to Email |
Using scanning tunneling microscopy (STM), Auger electron spectroscopy (AES), and low energy electron microscopy (LEEM) we have investigated the growth of graphene on Ni(111) surfaces by carbon segregation from the bulk. We reveal two distinct growth modes for graphene growth. Between 480 and 650 °C graphene forms on clean Ni(111) and below 480 °C graphene grows by an in-plane conversion of a surface carbide phase [1,2]. This is the first time that graphene formation is observed by transformation of a surface carbide. STM indicates that a lattice-matched, one-dimensional in-plane domain boundary between graphene and the carbide forms. In the presence of the carbide graphene grows by replacing Ni-atoms with carbon at this interface. In addition to the growth of graphene we will also briefly discuss atomic-scale defects that can be synthesized in Ni-supported graphene. Different adsorption configurations of graphene on Ni will result in domain boundaries that exhibit pairs of pentagonal and octagonal carbon rings [3]. These line defects have similar electronic properties to graphene zig-zag edges but without the dangling bonds.
[1] J. Lahiri, T. Miller, L. Adamska, I.I. Oleynik, M. Batzill Nano Lett. 11, 518 (2011)
[2] J. Lahiri, T. Miller, A.J. Ross, L. Adamska, I.I. Oleynik, M. Batzill New J. Phys. 13, 025001 (2011).
[3] J. Lahiri, Y. Lin, P. Bozkurt, I.I. Oleynik, M. Batzill Nature Nanotechnol. 5, 326 (2010).