| AVS 58th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Monday Sessions |
| Session GR-MoM |
| Session: | Graphene Growth |
| Presenter: | Luigi Colombo, Texas Instruments Incorporated |
| Authors: | L. Colombo, Texas Instruments Incorporated C. Magnuson, University of Texas at Austin Y. Hao, University of Texas at Austin X. Li, University of Texas at Austin R.S. Ruoff, University of Texas at Austin |
| Correspondent: | Click to Email |
Graphene has been shown to have unique electronic, chemical and physical properties over the past few years and this is opening many opportunities for its use. However, to date most of the experiments have been performed on graphene exfoliated from natural graphite and the graphene films have been rather small, hundreds of microns squared. Transport properties equivalent to those achieved on exfoliated graphene have also been achieved on layers of graphene on SiC; but this graphene is not easily transferred to other substrates. There is now a need to develop high quality, large area single crystal graphene. Li et al. discovered the growth of graphene on copper metal foils by chemical vapor deposition (CVD) using methane gas which led for the first time to the growth of meter square graphene. The current CVD process can indeed grow very large graphene films but the films are polycrystalline. The domain size for the baseline process is a few tens of microns in diameter and in principle there is pathway to achieving much larger domain size films. Large single crystals, 0.5 mm size, have recently been reported and perhaps we can learn from these results how to extend them to grow even large graphene films with higher quality. The growth mechanisms of graphene and single crystal growth of graphene will be presented and discussed together with a discussion of what the semiconductor industry would need to make graphene a reality.