AVS 58th Annual International Symposium and Exhibition | |
Graphene and Related Materials Focus Topic | Monday Sessions |
Session GR+TF+ET-MoA |
Session: | Graphene: Electronic Properties and Charge Transport |
Presenter: | Salvador Barraza-Lopez, Georgia Institute of Technology |
Authors: | M.Y. Chou, Georgia Institute of Technology M.E. Kindermann, Georgia Institute of Technology S. Barraza-Lopez, Georgia Institute of Technology |
Correspondent: | Click to Email |
Graphene is a flat form of carbon only one-atom tick. Formed by two interweaving triangular sublattices, it has two atoms on its unit cell. Under normal conditions the charge carriers in graphene can be described with an effective single-particle picture. They display an isotropic and linear (i.e., conical) electronic dispersion around the charge neutrality level. This dispersion is described by a Dirac-like equation with a pseudo-spin (related to the sublattice degree of freedom) instead of the standard electron spin. The pseudo-spin is responsible in great part for the strongly suppressed back-scattering in graphene that results in coherent quantum charge transport on lengths up to the micrometer scale, making graphene a relevant material for electronic applications. Yet for applications and for electrical measurements metal contacts are patterned onto graphene. Then the two following questions naturally arise: (i) How graphene interacts with these metal contacts? (ii) How this interaction affects the conductance of a metal/graphene/metal junction in comparison with the hypothetical conductance of pristine (and contactless, infinite) graphene?
In this talk I will discuss quantitatively –within a single-particle description– the quantum transport of charges through graphene, with a focus on the signatures that metal/graphene interfaces imprint on the conductance features. The metals considered are normal (i.e., not superconducting), and spin unpolarized. A crucial observation is that not all metal form covalent bonds to graphene. The conductance is obtained as a function of the separation between contacts, the width of the junctions, as well as the thickness of the metal layers when necessary. From these calculations we are able to extract the basic physics involved in transport for all normal metals [1]. Our studies aim towards a comprehensive modeling of graphene devices at the quantitative level.
[1] S. Barraza-Lopez, M. Vanevic, M. Kindermann, and M.-Y. Chou. "Effects of metallic contacts on electron transport through graphene." Phys. Rev. Lett. 104, 076807 (2010); S. Barraza-Lopez, M. Kindermann and M.-Y. Chou. "Charge transmission through short two-terminal graphene junctions with normal bonding metal contacts." (In preparation.)