AVS 58th Annual International Symposium and Exhibition
    Graphene and Related Materials Focus Topic Monday Sessions
       Session GR+TF+ET-MoA

Paper GR+TF+ET-MoA11
Electron Transport in Carbon Nanotube - Graphene Contacts

Monday, October 31, 2011, 5:20 pm, Room 208

Session: Graphene: Electronic Properties and Charge Transport
Presenter: Kalman Varga, Vanderbilt University
Authors: B. Cook, Vanderbilt University
W. French, Vanderbilt University
K. Varga, Vanderbilt University
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Graphene and carbon nanotubes are two of the most promising materials for future applications due to their unique properties. Devices combining the two materials are expected to be particularly advantageous. The interface of carbon nanotubes and various metal electrodes has been previously studied, both experimentally (Chen et al. Nano Lett. 2005, Zhang et al. Nano Lett. 2007) and theoretically (Shan et al. PRB 2004, Zhu et al. APL 2006, He et al. APL 2009). These studies focus on the search for materials with a low p-type Schottky barrier. Hybrid graphene-carbon nanotube structures have been previously demonstrated (Tung et al. Nano Lett. 2009). We propose the use of graphene as a electrode material for carbon nanotube based FET devices. To this end the carbon nanotube - graphene contact is investigated with first-principles calculations within density functional theory of the Schottky barrier height (SBH) and transport properties. Total energy and electronic structure calculations are carried out with a plane-wave basis set and the transport characteristics are calculated with a localized atomic orbitals basis within the non-equilibrium Green's function framework. We consider only the side-contact geometry, nanotubes laying atop graphene. The SBH for (5,0), (8,0) and (10,0) nanotubes on graphene is calculated. The transport characteristics of a combined graphene - nanotube device are considered. In the case of small diameter nanotubes (~0.6nm) a SBH of ~0.09 eV is found when graphene contacts are used, much lower than the typical reported values (0.3 eV and higher).