| AVS 58th Annual International Symposium and Exhibition | |
| Electron Transport in Low Dimensional Materials Focus Topic | Tuesday Sessions |
| Session ET+EM+NS+GR-TuM |
| Session: | Electron Behaviors in Nanoelectronics, Interconnect, and Carbon-based Materials |
| Presenter: | Shengyong Qin, Oak Ridge National Laboratory |
| Authors: | S. Qin, Oak Ridge National Laboratory W. Fu, Chinese Academy of Sciences L. Liu, Chinese Academy of Sciences T.H. Kim, Oak Ridge National Laboratory S.L. Hellstrom, Stanford University W. Wang, Chinese Academy of Sciences W. Liang, Chinese Academy of Sciences X. Bai, Chinese Academy of Sciences E. Wang, Chinese Academy of Sciences A.-P. Li, Oak Ridge National Laboratory |
| Correspondent: | Click to Email |
Complex nanostructures such as branched semiconductor nanotetrapods are promising building blocks for next-generation nanoelectronics. Here we report on the electrical transport properties of individual CdS tetrapods in a field-effect transistor (FET) configuration with a ferroelectric Ba0.7Sr0.3TiO3 film as high-к, switchable gate dielectric. A cryogenic four-probe scanning tunneling microscopy is used to probe the electrical transport through individual nanotetrapods at different temperatures. A p-type field effect is observed at room temperature, owing to the enhanced gate capacitance coupling. And the reversible remnant polarization of the ferroelectric gate dielectric leads to a well-defined nonvolatile memory effect. The field effect is shown to originate from the channel tuning in the arm/core/arm junctions of nanotetrapods. At low temperature (8.5 K), the nanotetrapod devices exhibit a ferroelectric-modulated single-electron transistor behavior. The results illustrate how the characteristics of a ferroelectric such as switchable polarization and high dielectric constant can be exploited to control the functionality of individual 3-dimensional nano-architectures. Acknowledgement: The research at the Center for Nanophase Materials Sciences is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy. The research in Beijing is supported by MOST and CAS of China.