| AVS 58th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing Division | Wednesday Sessions |
| Session EM-WeA |
| Session: | Defects in Electronic Materials |
| Presenter: | Rachel S. Goldman, University of Michigan |
| Authors: | R.L. Field III, University of Michigan T. Dannecker, University of Michigan Y. Jin, University of Michigan C. Kurdak, University of Michigan C. Uher, University of Michigan R.S. Goldman, University of Michigan |
| Correspondent: | Click to Email |
It has been suggested that alloy films composed of highly immiscible solute atoms in a solvent, termed “highly-mismatched alloys” (HMAs), are promising for energy conversion devices due to their ability to efficiently absorb light and heat, and to subsequently transport charge carriers. The properties of HMAs are often described with models focusing on the influence of individual solute atoms, assuming that all solute atoms “see” the same atomic environment. In the case of GaAsN alloys, the single local environment models predict a N composition-dependence of the energy band gap which agrees qualitatively with experiment. However, such models do not quantitatively explain several extraordinary electronic and optical properties. In this talk, I will discuss our investigations of the growth [1], structure [2-3], and properties [4-6] of GaAsN alloys. I will focus on correlations between the presence of N-N, N-As, and N-Si pairs [2,5-6] and extraordinary physical phenomena, including non-monotonic composition-dependent effective masses [7] and persistent photoconductivity [8]. I will also discuss our preliminary work on complementary alloys in the GaAsBi system.
[1] M. Reason, et al, J. Appl. Phys. 101, 083520 (2007).
[2] M. Reason, et al, Appl. Phys. Lett. 85, 1692 (2004).
[3] M. Reason, et al, J. Appl. Phys. 97, 103523 (2005).
[4] M. Reason, et al, J. Appl. Phys. 102, 103710 (2007).
[5] Y. Jin, et al, Appl. Phys. Lett. 95, 062109 (2009).
[6] Y. Jin, et al. Appl. Phys. Lett. 95, 092109 (2009).
[7] T. Dannecker, et al. Phys. Rev. B 82, 125203 (2010).
[8] R.L. Field III, et al., to be submitted (2011).