AVS 58th Annual International Symposium and Exhibition
    Electronic Materials and Processing Division Thursday Sessions
       Session EM-ThP

Paper EM-ThP17
CIGS Thin Film Prepared by One-Step Sputtering Process by Using a Powder Target

Thursday, November 3, 2011, 6:00 pm, Room East Exhibit Hall

Session: Electronic Materials and Processing Poster Session
Presenter: Seongha Oh, Chosun University, Republic of Korea
Authors: S. Oh, Chosun University, Republic of Korea
G. Cho, Chosun University, Republic of Korea
N. Kim, Chosun University, Republic of Korea
Correspondent: Click to Email
CIGS thin film with cells reported the highest efficiency up to 20% in the thin film solar cells, which is generally considered as the most promising thin film solar cell. It has been fabricated by using the three stage process in evaporation process with four sources of Cu, In, Ga, and Se pure elements. This preparation method requires very strict controls during the deposition process of CIGS thin film. Recently, there are two widely used methods for CIGS thin film fabrication: selenization with H2Se or Se after sputtering and thermal co-evaporation. Although the sputtering process was the most suitable method for the deposition of CIGS thin film over the large area with a good uniformity, the two-step selenization shows the critical drawbacks including the additional manufacturing steps, higher materials costs, and the less efficiency. The co-evaporation for CIGS thin film is hard to manage the sources in sequence and to deposit over the large area. For this reason, the novel method for CIGS preparation was demonstrated by using the sputtering process with the powder target. This method has the advantages of the production of target, change of stoichiometry, and easy doping of impurities. The composition of the powder-sputtered CIGS thin film with 1 μm-thickness were analyzed and compared to that of the starting powder target with a composition of Cu, In, Ga, and Se at 25, 15, 10, and 50 at% by electron probe microanalysis (EPMA). The crystal structure, surface morphology, optical properties, and electrical characteristics of CIGS thin film were analyzed by using X-ray diffraction (XRD), atomic force microscope (AFM), UV-Visible spectrophotometer, and a Hall effect measurement system.