| AVS 58th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing Division | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | Matara Kankanamge Indika Senevirathna, Georgia State University |
| Authors: | M.K.I. Senevirathna, Georgia State University S. Gamage, Georgia State University M. Buegler, Georgia State University R. Atalay, Georgia State University J. Hong, Georgia Institute of Technology N. Dietz, Georgia State University A.G.U. Perera, Georgia State University |
| Correspondent: | Click to Email |
The dependency of the optoelectronic and structural properties of InN epilayers on the reactor pressure is presented. The InN epilayers were grown by high-pressure chemical vapor deposition (HPCVD) varying the reactor pressure from atmospheric pressure to 18.5 bar. The optoelectronic properties such as free carrier concentration and mobility have been studied using Fourier transform IR reflection spectroscopy. The film thickness, growth rate, free carrier concentration and carrier mobility of the InN layer are obtained by simulating the IR reflectance spectra, using a multilayer stack layer model and a Lorentz-Drude model. XRD 2theta- omega scans and Raman spectroscopy were used to evaluate the structural properties of the epilayers.