AVS 57th International Symposium & Exhibition
    Thin Film Tuesday Sessions
       Session TF2-TuM

Paper TF2-TuM3
Bipolar Resistive Switching Characteristics of HfOx with Anode-Interface HfAlOx Layer

Tuesday, October 19, 2010, 8:40 am, Room Ruidoso

Session: Nonvolatile Memory
Presenter: J.G. Kim, Yonsei University, Republic of Korea
Authors: H.-C. Sohn, Yonsei University, Republic of Korea
J.G. Kim, Yonsei University, Republic of Korea
H.D. Na, Yonsei University, Republic of Korea
K.-M. Lee, Yonsei University, Republic of Korea
S.-H. Lee, Yonsei University, Republic of Korea
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In this work, we investigated the effect of anode-interface HfAlOx layer on the resistance switching characteristics of ALD HfO­x films. HfAlOx on TiN bottom electrode with the thickness and the cycle ratio of HfO2 and Al2O3 was deposited and then HfO2 thin film was grown by atomic layer deposition (ALD) process. The resistance switching behavior of the Pt/HfO2/HfAlOx/TiN MIM stack was characterized in conjunction with physical property such as chemical bonding of HfOx and HfAlOx. HfAlOx layer with increasing the ratio of Al2O3 improved the endurance, the variance of VSET and VRESET, and the variance of RLRS and RHRS. Also, the resistances of LRS during first RESET processing were decreased with increasing the ratio of Al2O3 in HfAlOx films. X-ray photoemission spectroscopy showed that the cycle ratio of Al2O3 in HfAlOx layer caused an increase of metallic Hf (Hf0) concentration. It was considered that an increase of metallic Hf (Hf0) concentration is closely related to the migration of oxygen ions or vacancies at interface between transition metal oxide and TiN electrode, resulting in the enhanced endurance, the current level of LRS and HRS, and the narrowed distribution of VSET & RESET and RLRS&HRS.