AVS 57th International Symposium & Exhibition
    Thin Film Tuesday Sessions
       Session TF-TuP

Paper TF-TuP8
First Reset Resistance Switching Characteristics with the Crystallinity of Ta2O5 Films

Tuesday, October 19, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Thin Film Poster Session I
Presenter: H.D. Na, Yonsei University, Republic of Korea
Authors: H.-C. Sohn, Yonsei University, Republic of Korea
H.D. Na, Yonsei University, Republic of Korea
K.-M. Lee, Yonsei University, Republic of Korea
J.G. Kim, Yonsei University, Republic of Korea
S.-H. Lee, Yonsei University, Republic of Korea
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In this work, we investigated the effect of the crystallinity on the first reset resistance switching characteristics of Ta2O5 films. Ta2O5 films annealed by Rapid Temperature Process (RTP) at above 650 ℃ were changed from amorphous to poly-crystal structure. The post-annealing temperature of above 650 ℃ produced the resistance switching behavior of first reset process, indicating the disappearance of forming process due to high current level. For indentifying the formation of local conductive path, the ratio of High Resistance States (HRS) and Low Resistance States (LRS) in 200 x 200 um2 pattern of Ta2O5 was measured with the regular interval of 25 points at read voltage of 0.2 V. The crystallinity of Ta2O5 films with the annealing temperature was measured by X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). TEM and Fast Fourier Transform (FFT) images showed the nano-crystal structure in local region of Ta2O5­ film annealed at 650 ℃. We expected that the local crystal structure in Ta2O5 films formed by RTP is expected to be closely related to the local conductive path.