| AVS 57th International Symposium & Exhibition | |
| Surface Science | Tuesday Sessions |
| Session SS-TuP |
| Session: | Surface Science Poster Session |
| Presenter: | K.A. Perrine, University of Delaware |
| Authors: | K.A. Perrine, University of Delaware J. Lin, University of Delaware A.V. Teplyakov, University of Delaware |
| Correspondent: | Click to Email |
As the sizes of the devices are quickly approaching the nanometer scale in the microelectronics industry, the need to control reactions at the molecular level and at the interface becomes very important for developing cleaner deposition techniques. For example, metal contacts grown using atomic layer deposition (ALD) have already made an impact on modern devices.
A common precursor used to grown copper metal contact, CuI (hexafluoroacetylacetonato) vinyltrimethylsilane or Cu(hfac)VTMS, has been previously studied at the molecular level on Si(100)-2x1 and other surfaces using surface sensitive techniques. Here we use this precursor as a reactant on several functionalized silicon surfaces to produce and control the size distribution of metallic nanoparticles.
We compare the reaction of Cu(hfac)VTMS with H-Si, NH2-Si, NH-Si, and OH-Si surface reactive sites and follow it by in situ infrared spectroscopy (FTIR), temperature-programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and complement with Density Functional Theory calculations. The growth of the hfac vibrational signatures indicates reaction on these functionalized surfaces and losses in the Si-H stretch spectral region can be used to follow the deposition kinetics. The surface is used here as a reducing agent providing the hydrogen to remove the ligands of the copper deposition precursor and to produce metallic nanostructures.