Paper NS-TuA12
Fabrication of High-Performance Carbon Nanotube Field-Effect Transistors with Dense and Aligned Nanotubes

Tuesday, October 19, 2010, 5:40 pm, Room La Cienega

Multilayered dense single-walled carbon nanotubes (SWCNTs) were deposited and aligned for fabrication of carbon nanotube field-effect transistors (CNTFETs) using the alternating electric field-directed dielectrophoresis (DEP) method. Ultrapurified high-pressure carbon monoxide (HiPCO)-grown SWCNTs were ultrasonically dispersed in n-methyl pyrrolidone (NMP) for deposition and alignment. High-performance CNTFETs with high on/off drain-source current ratios and good saturation of drain-source current were fabricated using semiconductors as the source/drain contact materials. The current-voltage (IV) electrical property of the fabricated CNTFETs was measured. The processes for alignment of multilayered dense SWCNTs and fabrication of CNTFETs and the electrical property of the fabricated CNTFETs will be reported in the conference.