| AVS 57th International Symposium & Exhibition | |
| Graphene Focus Topic | Monday Sessions |
| Session GR+NS-MoA |
| Session: | Graphene: Chemical Reactions |
| Presenter: | J.S. Burgess, National Research Council |
| Authors: | J.S. Burgess, National Research Council J.A. Robinson, Naval Research Laboratory M. Zalalutdinov, SFA, inc K. Perkins, Naval Research Laboratory P.M. Campbell, Naval Research Laboratory E. Snow, Naval Research Laboratory B.H. Houston, Naval Research Laboratory J.W. Baldwin, Naval Research Laboratory |
| Correspondent: | Click to Email |
Graphene was grown by CVD on a copper substrate. The as-grown samples and samples transferred to silicon on insulator (SOI) and SiO2 substrates were then exposed to XeF2 gas resulting in fluorination of the graphene sheets. The samples were characterized using XPS and Raman spectroscopies. XPS showed maximum fluorine content in the graphene of 20 % for the graphene on copper and 50 % on SOI. The marked difference is owed to the etching of the silicon layer on the SOI substrate, allowing exposure of the underside of the graphene sheet to the XeF2 gas and fluorination of both sides of the graphene sheet. The fluorine was removed from the film using both thermal and chemical (hydrazine reduction) methods. Chemical, mechanical, and electrical properties of these materials will also be discussed.